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Samsung details HBM4 specifications including 4nm logic base die and 12-Hi stacking
Thursday, February 5, 2026 at 09:21 PM
Samsung is developing HBM4 technology featuring 1c DRAM and a 4nm logic base die. Key specifications include data transfer rates up to 13Gbps, 3.3TB/s bandwidth per stack, and 12-Hi stacking providing capacities up to 48GB. The technology aims for a 40% efficiency improvement and 30% better heat dissipation compared to previous generations.
Context
Samsung has officially commenced mass production of its HBM4 memory, marking the first commercial rollout of the sixth-generation high-bandwidth solution. This milestone secures a critical supply position for Nvidia’s upcoming Vera Rubin AI accelerators, scheduled for a mid-March debut. By integrating its in-house 4nm logic base die with advanced 1c DRAM, Samsung is aggressively positioning itself to regain market leadership from rivals who relied on older nodes for their initial HBM4 samples.
The new architecture provides a massive performance leap, achieving consistent data speeds of 11.7Gbps—with potential peaks of 13Gbps—and a total per-stack bandwidth of 3.3TB/s. Initial shipments feature 12-Hi stacking with capacities up to 36GB, while future 16-Hi versions will scale to 48GB. Beyond raw speed, the move to a 4nm foundation improves energy efficiency by 40% and heat dissipation by 30%, directly addressing the thermal bottlenecks of next-generation data centers.
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