Ramxeed aims to commercialize HZO-based FeRAM with significantly increased capacity by 2030
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Ramxeed aims to commercialize HZO-based FeRAM with significantly increased capacity by 2030

Tuesday, March 31, 2026 at 09:33 PM

Ramxeed, formerly Fujitsu Semiconductor Memory Solution, is developing ferroelectric memory (FeRAM) using hafnium zirconium oxide (HZO) mixed crystals. The company aims to commercialize this high-capacity memory technology by approximately 2030, targeting significant increases in memory density compared to current solutions.

Context

Japanese memory specialist RAMXEED, formerly known as Fujitsu Semiconductor Memory Solution, has announced plans to commercialize high-capacity ferroelectric memory (FeRAM) using hafnium zirconium oxide (HZO) by 2030. Unlike traditional FeRAM that uses lead zirconate titanate, the shift to HZO-based materials allows for significantly better CMOS compatibility and scaling, enabling the company to overcome previous density limitations and target Storage Class Memory applications. This development is critical for the AI and automotive supply chains, where the demand for fast, non-volatile memory with high endurance is surging. While current commercial FeRAM is often limited to densities of a few megabits, RAMXEED's roadmap aims for a massive capacity increase to support advanced edge computing and real-time data processing. By leveraging HZO technology, the company seeks to bridge the performance gap between DRAM and NAND flash, providing a low-power alternative for mission-critical storage.

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