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Mitsubishi Materials develops sintered copper bonding material with 100-200nm particles for power modules
Sunday, February 1, 2026 at 09:43 PM
Mitsubishi Materials has developed a sintered copper bonding material utilizing copper particles sized between 100 to 200nm. This material is designed for high-power modules, offering a high-reliability joining solution for power semiconductor manufacturing.
Context
Mitsubishi Materials has developed a new sintered copper bonding material utilizing proprietary sub-micron copper particles, enabling high-reliability power semiconductor packaging at significantly lower temperatures. Unlike conventional copper powders that typically require intense heat, this material leverages ultra-fine particle technology to achieve robust bonding without risking thermal damage to sensitive components. The breakthrough addresses a critical bottleneck in the manufacturing of next-generation power modules used in electric vehicles and AI data centers, where efficient heat dissipation and material durability are paramount.
The transition to copper-based bonding offers a cost-effective alternative to expensive silver-based materials while providing superior thermal and electrical conductivity. This technology is specifically designed to support the rigorous demands of Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductors, which operate at higher temperatures than standard silicon. By facilitating low-temperature sintering, Mitsubishi Materials strengthens its position in the global AI hardware supply chain, providing a scalable solution for high-density, high-efficiency power electronics required for future infrastructure.
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