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Micron 1c DRAM node found in latest smartphone teardown and die analysis
Thursday, April 2, 2026 at 01:39 PM
A die analysis of Micron 1c DRAM reveals its implementation in high-end smartphones, indicating successful mass production and deployment of the 1c node.
Context
Recent die analysis and smartphone teardowns have confirmed the presence of Micron's 1c (1-gamma) DRAM node in cutting-edge mobile devices. This sixth-generation 10nm-class memory represents a major technological milestone, following Micron's earlier announcements in February 2025 regarding the sampling of its 1-gamma node. The company is the first in the industry to reach this node in a consumer device, utilizing advanced EUV lithography and next-generation high-K metal gate (HKMG) technology to achieve a 30% increase in bit density over the previous 1-beta generation.
This development is critical for the Edge AI market, as the 16Gb chips offer a 15% speed increase up to 9200MT/s and a 20% reduction in power consumption. For investors, Micron's successful deployment in flagship smartphones signals a competitive lead over South Korean rivals Samsung and SK Hynix in the 1c race. The company aims to have these sixth-generation products account for more than 50% of its total DRAM bit shipments by the second half of 2026.
Sources (7)
Micron Announces Shipment of 1γ (1-gamma) DRAM: Pioneering Memory Technology Advancements for Future Compute Needs | Micron TechnologyInside 1-Alpha DRAM, the world's most advanced DRAM process technology | Micron Technology Inc.SK Hynix pushes 1C DRAM for HBM4E as AI memory demand surgesThe Memory Wall: Past, Present, and Future of DRAM - SemiAnalysisMicron starts shipping 1γ DRAMs ...[News] Micron Ships World’s First 1γ-Based LPDDR5X Sample, Marking Industry’s Thinnest DesignMicron Joins the 1c DRAM Mass Production Race, HBM4E Emerges as Next Key Battleground — BigGo Finance
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