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Renesas Electronics President Hidetoshi Shibata says power semiconductor business is not in a volume expansion phase
Wednesday, March 25, 2026 at 08:17 AM
During the general shareholders' meeting, Renesas Electronics President Hidetoshi Shibata stated that the company's power semiconductor business is currently focused on profitability and efficiency rather than aggressive capacity expansion. He emphasized that the segment is not yet at a stage where scaling volume is the priority.
Context
At a recent shareholder meeting, Renesas Electronics President Hidetoshi Shibata stated that the company’s power semiconductor business is "not in a volume expansion phase," signaling a strategic pivot away from aggressive capacity growth. This transition follows the company's decision in June 2025 to scrap mass-production plans for Silicon Carbide (SiC) at its Takasaki plant. The retreat was driven by intense competition from Chinese manufacturers and the financial collapse of its primary partner, Wolfspeed, which resulted in a 250 billion yen impairment for Renesas.
While scaling back SiC ambitions, Renesas is refocusing its power strategy on Gallium Nitride (GaN) technology and high-density energy solutions for AI data centers. The company has pushed back its $20 billion annual revenue target from 2030 to 2035, prioritizing R&D and operational margins over immediate market share in the EV power sector. This shift marks a significant move toward specialized, high-efficiency power management as the company navigates structural headwinds in the broader semiconductor supply chain.
Sources (5)
[PDF] 22nd Annual General Meeting of Shareholders Convocation Notice ...Renesas scraps SiC production plan amid rising Chinese challengeRenesas Reports Financial Results for the Year Ended December 31, 2024[PDF] Notice of the 24th Annual General Meeting of Shareholders (Access ...Renesas Demonstrates Strategic Growth in Power Electronics - Power Electronics News
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