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Samsung Electronics records 37.7 trillion won R&D spend to meet AI memory demand

Wednesday, March 11, 2026 at 12:54 AM

Samsung Electronics reached record research and development spending of 37.7 trillion won (approximately $25.6 billion) in 2024, representing a 7.8% increase over 2023. This investment was driven by the necessity to advance high-end memory technologies for AI infrastructure. Additionally, the company allocated 52.7 trillion won toward capital expenditures for new manufacturing facilities and equipment during the same period.

Context

In a strategic push to reclaim leadership in the AI-driven memory market, Samsung Electronics reported a record-high research and development (R&D) expenditure of KRW 37.7 trillion (approx. $25.6 billion) for fiscal year 2024. This represents a 7.8% increase over the previous year, as the company aggressively targets the growing demand for High-Bandwidth Memory (HBM) used in advanced AI accelerators. Alongside this R&D surge, the firm allocated KRW 52.7 trillion toward capital expenditures for new plants and equipment, reinforcing its manufacturing scale against rivals SK Hynix and Micron. The investment pivot comes as Samsung seeks to narrow the gap with SK Hynix, which has dominated recent supply cycles for HBM3E. By early 2026, Samsung has successfully transitioned to mass production of industry-first HBM4 using its 6th-generation 10nm-class DRAM and 4nm logic process. This massive capital injection is critical as the global memory market enters a projected supercycle, with industry analysts forecasting the HBM segment alone to reach $54.6 billion by 2026.

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