News
Samsung Electronics sets 85% year-end yield target for 12-layer HBM4 production
Friday, March 13, 2026 at 02:27 AM
Samsung Electronics has updated its internal roadmap for HBM4 production, setting an aggressive yield target of 85% for its 12-layer high-bandwidth memory by the end of the year. This move signals a push to stabilize advanced packaging and manufacturing processes to better compete in the AI memory market.
Context
Following the commencement of mass production in February 2026, Samsung Electronics has set an aggressive 85% year-end yield target for its 12-layer HBM4 production. This move is designed to reclaim market leadership after trailing rivals SK hynix and Micron in the HBM3E cycle. By leveraging its most advanced 1c DRAM process and 4nm logic base dies, the company aims to stabilize high-volume manufacturing for next-generation AI accelerators and hyperscale datacenters.
This yield milestone is critical as Samsung projects its HBM sales will more than triple in 2026 compared to the previous year. The company is utilizing a tightly integrated design approach between its foundry and memory businesses to reduce lead times and satisfy surging demand for 11.7Gbps transfer speeds. With sampling for HBM4E slated for the second half of 2026, achieving high yields on the 12-layer HBM4 remains the primary hurdle for securing a dominant share of the projected $8 billion+ annual HBM revenue run-rate.
Sources (5)
Samsung Ships Industry-First Commercial HBM4 With Ultimate Performance for AI Computing – Samsung Global Newsroom5 big analyst AI moves: Buy Samsung pullback, Nvidia back as top chip pick By Investing.comSamsung to adopt hybrid bonding for HBM4 memory - Tom's HardwareHBM3E vs HBM4 Comparison: Bandwidth, Capacity, Power & AI ...SK hynix holds 62% of HBM, Micron overtakes Samsung, 2026 battle pivots to HBM4 - Astute Group
Related Companies
Samsung Electronics
005930