News
Infineon Technologies begins mass production of hybrid SiC and IGBT power modules to reduce EV costs
Monday, March 9, 2026 at 08:14 PM
Infineon Technologies has started mass production of hybrid power modules that combine Silicon Carbide (SiC) and Insulated Gate Bipolar Transistors (IGBT). This hybrid approach aims to reduce the overall manufacturing cost of electric vehicle (EV) drivetrains while maintaining high efficiency.
Context
German semiconductor leader Infineon Technologies has commenced mass production of its HybridPACK Drive G2 Fusion power modules, a strategic move to lower electric vehicle (EV) manufacturing costs. By combining traditional Silicon (Si) IGBTs with advanced Silicon Carbide (SiC) technology in a single "plug-and-play" module, the company aims to deliver nearly the efficiency of a full-SiC solution while using only 30% SiC and 70% silicon area. This hybrid approach bridges the gap between affordable, high-volume silicon components and the premium performance of pure SiC.
This production milestone aligns with Infineon's broader 200 mm SiC roadmap, which includes the recent opening of the world's largest 200 mm SiC fab in Kulim, Malaysia, and product rollouts from its Villach, Austria facility in Q1 2025. By optimizing the SiC content per vehicle, Infineon provides OEMs a path to extend EV range and reduce energy consumption without the steep price tag of full wide-bandgap architectures. The company has already secured design wins totaling approximately €5 billion for its expanded SiC capacity, reflecting strong market demand for cost-efficient power electronics in the e-mobility and AI data center sectors.
Related Companies
Infineon
IFX