TSMC rules out high-NA EUV for A16 and A14 process nodes
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TSMC rules out high-NA EUV for A16 and A14 process nodes

Thursday, March 19, 2026 at 09:45 PM

TSMC informed analysts from Bernstein that the company does not plan to implement high-NA EUV lithography for its upcoming A16 and A14 process nodes, indicating a reliance on existing lithography techniques for these advanced technologies.

Context

TSMC has confirmed it will not adopt ASML's high-numerical aperture (High-NA) EUV lithography for its upcoming A16 (1.6nm) and A14 (1.4nm) process nodes. During a meeting with Bernstein and at recent technology symposiums, TSMC's Senior Vice President Kevin Zhang stated, "Whenever we see High-NA will provide meaningful, measurable benefit, we will do it," noting that the company can achieve substantial enhancements through 2028 without the new tools. By extending the use of existing low-NA EUV via multi-patterning, the foundry aims to avoid the massive capital expenditure associated with the $400 million High-NA systems. This strategy marks a sharp divergence from Intel, which has aggressively integrated High-NA for its 18A and 14A nodes to regain a technical lead. For investors, TSMC’s decision prioritizes cost-efficiency and yield stability over raw equipment specs, potentially keeping its capital intensity in check. While the A16 node is expected for volume production in H2 2026, the company indicates it will likely delay High-NA adoption until at least the A14P revision or beyond, once the technology matures and the cost-to-benefit ratio improves.

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