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China's Guotan Semiconductor to Invest 1.15 Billion RMB in World's Largest 12-Inch Optical SiC Base

Wednesday, December 3, 2025 at 03:44 AM

Shenzhen Guotan Semiconductor Technology announced a 1.15 billion RMB investment to establish the world's largest 12-inch optical-grade Silicon Carbide (SiC) material production base in Huizhou, Guangdong, targeting an annual capacity of 200,000 wafers. The materials will be used for high-end applications like AR/VR optical waveguide lenses, high-speed optical communication, and CoWoS advanced packaging interposer layers for AI/GPU chips.

Context

On November 19, China’s Guotan Semiconductor announced a RMB 1.15 billion investment to build the world's largest 12-inch optical-grade silicon carbide (SiC) materials production base in Huizhou, Guangdong. The project's first phase will invest RMB 300 million to establish an annual capacity of 50,000 wafers within one year. The facility will eventually scale to 200,000 wafers per year, with a projected annual output value exceeding RMB 3.6 billion. This move signals a major push by China to secure its domestic supply chain for next-generation technologies. The advanced optical-grade SiC, with a high refractive index of 2.7, is critical for high-growth sectors. Products will include CoWoS advanced-packaging interposers for AI and GPU chips, AR/VR waveguide lenses, and components for LiDAR and quantum communications. This development could provide a crucial domestic supply for companies like optics-focused Will Semiconductor and packaging giant ASE Technology, potentially lowering costs and reducing reliance on foreign suppliers.

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