Samsung enters Gallium Nitride and Silicon Carbide semiconductor markets
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Samsung enters Gallium Nitride and Silicon Carbide semiconductor markets

Wednesday, March 25, 2026 at 10:41 AM

Samsung is expanding its semiconductor manufacturing portfolio by entering the Gallium Nitride (GaN) and Silicon Carbide (SiC) power semiconductor markets, potentially leveraging high profits from its memory business to scale production.

Context

On March 25, 2026, reports surfaced that Samsung Electronics is poised to begin mass production of 8-inch Gallium Nitride (GaN) power semiconductors as early as the second quarter. This move marks the company’s official entry into the high-efficiency power chip market after more than three years of development. By producing its own epitaxial wafers and offering a turnkey foundry service, Samsung aims to capture demand from the AI data center and electric vehicle sectors, where GaN is critical for high-speed switching and thermal management. Simultaneously, Samsung is preparing to provide Silicon Carbide (SiC) samples for production later this year, targeting the 1,200V to 1,700V range. While initial revenue from the GaN foundry is projected to stay below 100 billion won ($66 million), the expansion is strategically timed as competitors like TSMC reportedly shift focus away from certain 200mm lines. Samsung’s entry intensifies regional competition with domestic rivals like DB HiTek, which is expected to follow with its own production in late 2026.

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Samsung Electronics
Samsung Electronics
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