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Kioxia HD Targets 2027 for Establishment of Oxide DRAM Technology (OCTRAM)
Wednesday, December 3, 2025 at 10:21 PM
Kioxia HD is reportedly aiming to establish its Oxide DRAM technology, known as OCTRAM, by 2027. This technology, jointly developed with Nanya Technology, is a new type of low-power DRAM using oxide-semiconductor transistors.
Context
Memory solutions leader Kioxia has announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F2 DRAM. This innovative technology integrates an oxide-semiconductor transistor, demonstrating a high ON current of over 15 μA/cell and an ultra-low OFF current below 1 aA/cell. This combination is expected to enable significantly lower power consumption and higher density compared to conventional DRAM.
This advancement is particularly relevant for the growing demands of AI and data centers, where efficient and high-density memory solutions are crucial. The use of an InGaZnO vertical transistor allows for improved circuit integration and leverages the material's properties for extremely low current leakage.
Kioxia aims to establish this oxide DRAM technology by approximately 2027, marking a potential shift in DRAM architecture that could impact future memory performance and energy efficiency across various computing applications.
Sources (14)
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