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SK Hynix to Introduce Hybrid Bonding on 300-Layer V10 NAND with 2027 Mass Production Goal
Friday, November 28, 2025 at 02:43 AM
SK Hynix is reportedly developing its 10th-generation (V10) NAND with a 300-layer architecture, planning to introduce the hybrid bonding process, with a goal of starting mass production early the year after next (likely 2027). The company also plans to convert 40,000 to 60,000 wafers per month of existing capacity to V9 production next year while operating its factories at virtually full capacity due to strong enterprise SSD demand.
Context
In its latest "Value Up Corporate Report," SK Hynix revealed plans to adopt hybrid bonding technology for its High Bandwidth Memory (HBM) products. The company is specifically targeting the implementation of this advanced packaging for HBM stacks exceeding 20 layers by the year 2029. This announcement confirms a long-term strategic pivot to next-generation manufacturing techniques to meet the escalating demands of the AI industry.
The shift to hybrid bonding is crucial as it allows for denser and more powerful memory stacks, overcoming the height, thermal, and I/O density limits of current technologies. By setting a clear timeline for 20+ layer HBM, SK Hynix aims to reinforce its leadership position in the premium AI memory market. This roadmap positions the company against competitors like Samsung, which is also exploring hybrid bonding, by defining a concrete goal for the next generation of ultra-high-capacity memory required for future AI accelerators.
Sources (18)
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