News
GlobalFoundries to manufacture Solid GaN technology
Thursday, March 12, 2026 at 02:11 PM
GlobalFoundries has been selected as the manufacturing partner for Solid GaN's gallium nitride technology. This indicates a deepening of the supply chain for wide-bandgap semiconductors used in power and RF infrastructure applications.
Context
On December 18, 2025, onsemi and GlobalFoundries (GF) announced a strategic collaboration to develop and manufacture advanced 650V gallium nitride (GaN) power products. This partnership utilizes GF’s 200mm eMode GaN-on-silicon process technology combined with onsemi’s drivers and packaging expertise. Customer sampling is projected to begin in the first half of 2026, with volume production to follow.
This move is critical for the AI and automotive supply chains, as GaN technology allows for significantly higher power density and efficiency in constrained spaces compared to traditional silicon. The collaboration specifically targets the surging power demands of AI data centers, electric vehicle onboard chargers, and aerospace systems. By leveraging GF's U.S.-based manufacturing and licensing agreements, the companies aim to secure a domestic supply of next-generation semiconductors required for the 800V DC architectures and high-frequency power conversion systems expected to dominate the market by 2030.
Sources (9)
onsemi - onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries[PDF] GaN and SiC Technologies for Next-Gen 800 VDC InfrastructureGaN transistors (GaN HEMTs) | Infineon TechnologiesQorvo GaN Solutions - Qorvo onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries | GlobalFoundriesSemiconductor OEMs team up on next-generation GaN technology for high-power applications - Electric & Hybrid Vehicle Technology InternationalUnlocking the full potential of GaN technology for next-gen power electronicsA Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives
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