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onsemi and Innoscience partner on 200mm GaN-on-Si process technology

Thursday, December 4, 2025 at 06:40 AM

onsemi has formed a partnership with the Chinese GaN market leader, Innoscience, to develop a 200mm GaN-on-Si process, with the goal of providing sample shipments by 2026.

Context

onsemi and Innoscience have signed a memorandum of understanding to explore expanding the production of gallium nitride (GaN) power devices. This strategic collaboration leverages Innoscience's established 200mm GaN-on-silicon process technology, aiming to accelerate the global deployment and adoption of GaN power solutions. The partnership combines onsemi's expertise in system integration, drivers, and packaging with Innoscience's high-volume GaN wafer manufacturing capabilities. The initiative focuses on low- and medium-voltage segments, specifically 40–200V, with the goal of scaling manufacturing for diverse markets including industrial, automotive, telecom, consumer, and AI datacenters. This move is expected to lower system costs and broaden the reach of GaN technology. Samples of the new GaN products are anticipated to be available in H1 2026. The companies highlight the significant market potential, projecting the GaN power market to reach $2.9 billion by 2030, driven by an estimated 42% compound annual growth rate from 2024-2030.

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