Rumor
Samsung reportedly gains supply chain momentum via massive eSSD and HBM base die orders
Monday, March 16, 2026 at 07:13 AM
Industry chatter indicates Samsung may be gaining significant momentum over SK Hynix due to large-scale orders for enterprise SSD (eSSD) components, including DRAM and controllers, alongside HBM base dies. There are also unconfirmed reports of substantial LPU (Language Processing Unit) orders that could significantly impact production volumes.
Context
As of March 2026, Samsung Electronics is reportedly shifting the competitive landscape against SK Hynix by securing massive orders for eSSD components and HBM4 base dies. While SK Hynix dominated the HBM3E market throughout 2025, Samsung is now leveraging its unique position as a vertically integrated provider. The company has reported faster-than-expected 2nm yield gains and is utilizing its 4nm logic process for HBM4 base dies, which have achieved a logic chip yield exceeding 90%.
This resurgence is driven by structural shifts in AI infrastructure, where surging demand for AI inference is fueling eSSD growth. Samsung plans to triple its HBM revenue in 2026, supported by an aggressive capacity expansion at its P4 facility aimed at reaching 200,000 wafers per month for 1c DRAM by year-end. Furthermore, Samsung has solidified its foundry pipeline by securing orders for next-generation LPUs from Groq, positioning the firm to capture a larger share of the Nvidia supply chain for the upcoming Rubin architecture.
Sources (11)
HBM4 | DRAM | Samsung Semiconductor GlobalSamsung reports faster-than-expected 2nm yield gains, aims to triple HBM revenueSamsung Electronics Plays 'World's First' HBM Card in Pursuit of SK Hynix - Seoul Economic DailySamsung sees acute chip shortage persisting, warns of mobiles headwind after profit triples | ReutersSamsung Stock Rises After Report on Mass Production of AI Chips - BloombergGroq Selects Samsung Foundry to Bring Next-gen LPU™ to the AI Acceleration MarketScaling the Memory Wall: The Rise and Roadmap of HBMHBM undergoes major architectural shakeup as TSMC and GUC detail HBM4, HBM4E and C-HBM4E — 3nm base dies to enable 2.5x performance boost with speeds of up to 12.8GT/s by 2027 | Tom's Hardware
Related Companies
SK Hynix
000660
Samsung Electronics
005930