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EDP and AIST develop technology for large-diameter diamond/silicon composite wafers
Wednesday, February 4, 2026 at 11:40 AM
EDP and AIST have developed a technology for increasing the diameter of diamond/silicon composite wafers, which are utilized in semiconductor power devices and advanced thermal management applications.
Context
EDP and AIST have developed a breakthrough bonding technology to produce large-diameter diamond/silicon composite wafers. By bonding diamond single crystals to silicon substrates at high temperatures, the team successfully reduced thermal warpage, allowing these wafers to be processed using standard mass-production semiconductor equipment. This addresses the primary bottleneck in commercializing diamond-based electronics: the limited size of high-quality diamond crystals.
This technology is vital for the AI and power electronics supply chain, where diamond’s superior thermal conductivity is needed to manage extreme heat in high-performance chips. Having already released 1-inch wafers and 30mm substrates, EDP is now scaling to 2-inch composite wafers. The company’s strategic roadmap aims to deliver larger 4-inch diamond substrates by March 2029.
By enabling diamond integration with standard silicon manufacturing tools, the industry can transition from lab research to industrial-scale production. EDP and AIST are currently securing intellectual property rights while preparing for mass production, targeting key applications in AI data centers and high-voltage power modules.
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