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ZEISS introduces Crossbeam 750 FIB-SEM for high-accuracy semiconductor sample preparation
Tuesday, March 31, 2026 at 09:10 PM
ZEISS has launched the Crossbeam 750, a focused ion beam scanning electron microscope (FIB-SEM) designed for high-accuracy sample preparation in semiconductor failure analysis and process control workflows.
Context
On March 31, 2026, ZEISS Research Microscopy Solutions announced the launch of the ZEISS Crossbeam 750, a next-generation focused ion beam-scanning electron microscope (FIB-SEM) designed for high-precision semiconductor sample preparation. The system introduces Gemini 4 electron optics, which provide superior resolution and a high-dynamic-range (HDR) "see while you mill" capability. This allows engineers to monitor rapid milling and ultrafine polishing in real time without interrupting the workflow, significantly improving the yield of uniform TEM lamellae and precise cross sections.
This development is critical for the semiconductor industry as device architectures transition to 3nm GAA-FET, CFET, and advanced 2D materials. The Crossbeam 750 addresses the challenges of leading-node logic and memory manufacturing by hitting nanometer-scale endpoints on the first attempt and supporting backside power delivery network workflows. By reducing re-work and providing a larger, undistorted field-of-view for 3D tomography, the tool enhances high-fidelity analysis for high-volume semiconductor failure analysis and research.
Sources (6)
New ZEISS Crossbeam 750 FIB-SEM for high-accuracy sample preparation workflowsNew ZEISS Crossbeam 750 FIB-SEM for high-accuracy ...
The LaserFIB: new application opportunities combining a high-performance FIB-SEM with femtosecond laser processing in an integrated second chamber - PMC
3D morphological and crystallographic analysis of ...[PDF] Technical Summaries - SPIEZEISS AI-Powered Failure Analysis at ISTFA Conference - 3D InCites
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