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Texas Instruments Launches GaN Semiconductor Production in Japan, Quadrupling Capacity
Thursday, December 11, 2025 at 02:26 AM
Texas Instruments began mass production of GaN-based power semiconductors on 200mm wafers at its Aizu, Japan factory in 2024, making it the second GaN manufacturing site after Dallas, Texas. This expansion quadruples the company's internal global GaN capacity.
Context
In October 2024, Texas Instruments (TI) significantly expanded its internal manufacturing capabilities by commencing production of gallium nitride (GaN)-based power semiconductors at its Aizu, Japan factory. This new facility, which utilizes qualified 200mm GaN technology, marks TI's second GaN manufacturing site and, when combined with its existing Dallas operations, effectively quadruples (4x) the company's internal GaN production capacity. This strategic move is crucial for TI as it aims to manufacture over 95% of its chips internally by 2030, enhancing supply chain control and cost efficiency. The Aizu plant, featuring over 90,000 sq ft of cleanroom space, will initially produce GaN chips starting at 900V, with plans to scale to higher voltages. TI has also successfully piloted 300mm GaN processes, indicating future scalability and technological advancement in this critical power semiconductor market.
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