Rumor

Samsung Reportedly Dedicates Pyeongtaek P4 Ph2 to HBM4 Production

Sunday, November 30, 2025 at 08:39 AM

Samsung Electronics has allegedly decided to dedicate Phase 2 of its Pyeongtaek P4 line to 6th-generation DRAM for HBM4 production, shifting the capacity from an initial foundry consideration. Main construction is reportedly set for Q2 2026, with the line aiming for operational readiness by the first half of 2027.

Context

Samsung Electronics is significantly accelerating the construction of Phase 4 (Ph4) of its Pyeongtaek Campus Plant 4 (P4) in South Korea, committing an additional 4.2 trillion won ($3 billion), a 50% increase over the initial contract. This accelerated investment is driven by a global surge in demand for memory chips, especially High Bandwidth Memory (HBM), fueled by the rapid expansion of artificial intelligence infrastructure and a partnership with OpenAI. The company aims to continue investments in P4 Phase 4 until the third quarter of 2026, with the goal of making the entire P4 line fully operational by 2026-2027. This push is to meet the growing demand for advanced memory technologies like HBM4, DDR5, and LPDDR6, which are crucial for AI applications. This increased activity signals a potential revenue boost for wafer fab equipment (WFE) players sooner than anticipated and may prompt other memory manufacturers to expedite their own facility expansions.