News
Samsung and SK Hynix delay HBM4 hybrid bonding, opting for TC bonders; Micron postpones fluxless bonder to 2028
Thursday, January 29, 2026 at 02:06 AM
Samsung and SK Hynix have reportedly delayed the implementation of hybrid bonding for HBM4 production, opting instead to use TC bonders. They are continuing R&D on hybrid bonding but mass production readiness and yield targets have not been met. HBM4 is supposedly optimized for TC bonders, with a 10µm pitch. Meanwhile, Micron has reportedly pushed back the introduction of its fluxless bonder to 2028.
Context
Samsung Electronics and SK Hynix have officially delayed the adoption of hybrid bonding for their next-generation HBM4 memory. Despite the technology's long-term potential for higher density, both industry leaders will continue utilizing advanced TC (Thermal Compression) bonders for initial mass production. This pivot stems from ongoing challenges in achieving stable manufacturing yields and the urgent need for scalable reliability as global AI demand surges.
The decision forces HBM4 designs to maximize existing TC technology, aiming to scale the interconnect pitch down to a precise 10µm threshold. Meanwhile, Micron has reportedly pushed back the introduction of its proprietary fluxless bonder technology until 2028. These collective delays suggest that while hybrid bonding remains a critical strategic goal, the semiconductor supply chain is prioritizing mature, proven processes to secure the current HBM production cycle through 2026 and beyond.
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