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Samsung enters backend design phase for custom HBM4E and updates memory roadmap
Wednesday, January 21, 2026 at 10:33 PM
Samsung Electronics has progressed to the backend design phase for its 7th-generation HBM4E custom base die, involving physical circuit placement and EDA tool optimization. The company has updated its internal roadmap to accelerate mass production timelines for HBM4E (targeted for 2027) and HBM5 (targeted for 2029). Samsung has reportedly expanded its custom HBM design teams, assigning dedicated personnel for clients including NVIDIA, Google, and Meta. Competitors SK Hynix and Micron are reported to be at similar development stages for HBM4E, with the industry shifting toward integrating logic functions directly into the memory base die.
Context
Samsung Electronics has entered the backend design stage for its 7th-generation HBM4E custom base die, a critical milestone in integrating logic functions directly into memory. To lead this effort, the company recently expanded its custom design team by 250 specialists to support specific requirements for NVIDIA, Google, and Meta. By recruiting talent from IBM and GlobalFoundries, Samsung is prioritizing the physical implementation of the memory interface, with design completion expected by June 2026.
The updated roadmap accelerates delivery timelines, positioning HBM4 for mass production in 2026, followed by HBM4E in 2027 and HBM5 by 2029. Samsung has instructed supply chain partners to finalize logistics by March 2026 to remain competitive against SK Hynix and Micron. This transition marks a pivot toward bespoke memory solutions where integrated compute capabilities and advanced thermal management are becoming industry standards for the next generation of AI hardware.
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