Rumor
Micron may utilize 1c nm process for high-density DRAM production
Tuesday, March 3, 2026 at 11:08 PM
Discussion regarding Micron potential use of 1c nm process technology for high-density DRAM modules, which could enable 2TB capacities in specific configurations.
Context
Micron is accelerating the deployment of its 1-gamma (1c) nm DRAM process, utilizing Extreme Ultraviolet (EUV) lithography to achieve a 30% increase in bit density over previous generations. This sixth-generation node is critical for scaling high-density memory solutions required by next-generation AI infrastructure. By leveraging a 32Gb monolithic die design, the company is delivering significantly higher capacity and a 20% reduction in power consumption without increasing the physical footprint of memory modules.
This technology is a primary enabler for the NVIDIA Vera Rubin platform, which utilizes 256GB SOCAMM2 (Small Outline Compression Attached Memory Modules). In an 8-channel (x8) configuration, these modules provide a massive 2TB of CPU-attached memory per processor. This jump in capacity and bandwidth is essential for handling the expansive context windows and real-time inference demands of modern Large Language Models (LLMs), positioning Micron as a key supplier in the high-performance AI data center market for 2026.
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