News
NTT achieves 'world-first' AlN high-frequency transistor operation
Tuesday, December 9, 2025 at 10:40 AM
NTT announced the successful operation of the world's first Aluminum Nitride (AlN) high-frequency transistor, which incorporates a unique low-resistance structure. The technology is expected to be key for post-5G communication systems.
Context
In a significant development for the semiconductor industry, NTT has announced a world-first breakthrough by successfully operating Aluminum Nitride (AlN)-based high-frequency transistors. This innovation expands AlN's application beyond power conversion into wireless communications, particularly for the post-5G era. The achievement addresses critical challenges in high-frequency signal amplification, promising enhanced wireless communication speeds and coverage.
The newly developed AlN transistors demonstrated RF-power amplification above 1 GHz and achieved a maximum oscillation frequency of 79 GHz in the millimeter-wave band. They also boast a high drain current exceeding 500 mA/mm and an on/off ratio over 10^9. This performance is particularly noteworthy as AlN exhibits a Johnson's Figure of Merit five times higher than Gallium Nitride (GaN), positioning it as a superior material for next-generation high-power, high-frequency transistors. NTT plans to present these findings at the 71st IEEE International Electron Devices Meeting (IEDM 2025) on December 10, 2025.
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