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Hitachi Energy and Pakal Technologies partner on high-voltage silicon power semiconductors
Tuesday, February 24, 2026 at 11:07 PM
Hitachi Energy and Pakal Technologies have entered a collaboration to develop Insulated Gate Turn-Off (IGTO) power semiconductors for next-generation power modules rated at 3.3 kV and above. The partnership focuses on advancing silicon-based power electronics for high-voltage applications.
Context
On February 24, 2026, Hitachi Energy announced a breakthrough partnership with silicon innovator Pakal Technologies to integrate the first new class of high-voltage silicon power semiconductors in four decades. The collaboration centers on the Insulated Gate Turn-Off (Thyristor), or IGTO(t), which will be incorporated into Hitachi Energy's next-generation power modules rated at 3.3 kV and higher. This technology is aimed at high-growth sectors including AI data centers, rail systems, and renewable energy storage.
The move is significant for investors as the IGTO(t) reduces conduction losses by 30 percent compared to standard IGBTs, providing a high-efficiency alternative to more expensive Silicon Carbide solutions. These performance gains enable higher power density and reduced cooling costs across critical infrastructure. As the high-voltage power switch market is forecast to surpass $36 billion by 2032, this partnership positions Hitachi Energy to capture intensifying demand for efficient, large-scale electrification and AI-driven power infrastructure.
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