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Rohm to establish integrated GaN production at Hamamatsu plant via TSMC technology license
Thursday, February 26, 2026 at 07:01 AM
Rohm is set to establish an integrated production system for GaN power semiconductors at its Hamamatsu plant. The company aims to begin production by 2027 using technology licensed from TSMC, marking a significant step in localized power semiconductor manufacturing.
Context
Rohm has officially moved to vertically integrate its Gallium Nitride (GaN) production, securing a direct process transfer from TSMC as the latter exits the GaN foundry business. This transition allows Rohm to bring manufacturing in-house, acquiring the specialized technology and equipment previously used for its outsourced products. The move addresses TSMC’s plan to phase out its GaN operations by July 2027, ensuring Rohm maintains supply continuity for its high-efficiency power chips.
This shift is vital as the global GaN power device market is forecasted to reach $3.51 billion by 2030, driven by the massive power requirements of AI data centers and electric vehicles. By leveraging its internal 8-inch wafer capabilities, Rohm aims to improve cost-efficiency and accelerate development cycles. This vertical integration positions Rohm as a primary independent supplier in the wide-bandgap sector, insulating its high-growth power semiconductor business from the volatility of third-party foundry shifts.
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