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Asahi Kasei and Nagoya University develop next-generation semiconductor transistor for 6G
Wednesday, December 10, 2025 at 01:47 PM
Asahi Kasei and Nagoya University have collaborated to develop a next-generation semiconductor transistor for 6G communications, according to Nikkei.
Context
A significant breakthrough in semiconductor technology has been announced by Asahi Kasei and Nagoya University, who demonstrated advanced pseudomorphic AlN/GaN/AlN High Electron Mobility Transistors (HEMTs). Utilizing MOVPE growth on single-crystal AlN substrates, their innovation achieves substantial performance enhancements. Key improvements include a dramatic reduction in sheet resistance from 2000 Ω/sq to 507 Ω/sq, and contact resistance plummeting from 64 Ω·mm to 2.4 Ω·mm. This leads to a two-digit reduction in device on-resistance, matching conventional AlGaN/GaN HEMTs.
The new HEMTs also boast an impressive maximum insulating breakdown field of 2 MV/cm, more than double that of typical AlGaN/GaN devices, alongside suppressed current collapse for improved stability. This development, presented at IEDM on December 8, 2025, and announced by Asahi Kasei on December 9, 2025, represents a manufacturable route for high-reliability, high-breakdown RF GaN devices.
This collaboration, involving partners like Crystal IS, is poised to significantly impact high-frequency communications, radar systems, and next-generation applications such as 6G, mmWave, and satellite RF power amplifiers. This breakthrough paves the way for more efficient and robust electronic components in critical high-power and high-frequency domains.
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