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Fujifilm Starts Operations at New Advanced Semiconductor Material R&D Center
Thursday, November 27, 2025 at 10:40 AM
Fujifilm has commenced operations at its new facility dedicated to the development of advanced semiconductor materials, specifically targeting materials like photoresists for EUV and Nanoimprint Lithography (NIL). This increases the company's R&D capacity for crucial next-generation lithography materials.
Context
FUJIFILM has started operations at a new ¥13 billion (approx. US$86 million) advanced semiconductor material development building at its Shizuoka Factory in November 2025. The four-storey, 6,400 m² facility is designed to accelerate the development and quality evaluation of next-generation materials critical for AI and high-performance computing chips. The focus will be on advanced photoresists for EUV and NIL lithography, PFAS-free materials, and polyimides for advanced packaging, positioning FUJIFILM to meet rising demand in the AI semiconductor sector.
This investment is part of a larger strategic push into a rapidly growing market. FUJIFILM's semiconductor materials business saw sales grow 1.7 times from FY2021 to FY2024, prompting over ¥100 billion in facility investments during that period. The company plans to invest at least another ¥100 billion from FY2025 to FY2026. For investors, this new facility signals FUJIFILM's commitment to capturing a larger share of the advanced semiconductor market, which is projected to double by 2030, by securing its role as a key supplier of next-generation consumables.
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