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Torex Semiconductor launches three 650V SiC Schottky barrier diodes
Tuesday, January 20, 2026 at 08:52 AM
Torex Semiconductor has launched three new 650V silicon carbide (SiC) Schottky barrier diodes, targeting power supply applications that require high efficiency and high voltage resistance.
Context
On January 20, 2026, Torex Semiconductor announced the development of three new 650V silicon carbide (SiC) Schottky barrier diodes (SBDs), marking a significant expansion of its power semiconductor portfolio. The new lineup includes the 6A (XBSC41), 8A (XBSC42), and 10A (XBSC43) series, which are engineered specifically to handle high inrush and surge currents. These components are designed to meet the rigorous efficiency and reliability standards required for next-generation power supply systems.
This launch addresses the growing demand for high-performance power management in industrial equipment and electric vehicles (EVs). By utilizing SiC technology, Torex Semiconductor enables higher switching speeds and reduced power loss compared to traditional silicon-based solutions, which is critical for maximizing battery life and improving thermal management in AI data centers and high-density power converters.
The company is positioning these products to capture a larger share of the power semiconductor market as industries pivot toward carbon neutrality and energy-efficient infrastructure. While Torex Semiconductor operates as a fabless designer for its analog ICs, it leverages its subsidiary Phenitec Semiconductor for specialized power device manufacturing, ensuring a stable supply chain for these mission-critical high-voltage components.
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