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Advantest develops electron beam inspection technology to support 2nm semiconductor manufacturing
Thursday, March 19, 2026 at 02:40 AM
Advantest engineers have detailed the development of electron beam pattern inspection systems designed to identify nano-level defects in 2nm process nodes. These tools are critical for yield management as semiconductor manufacturing transitions to advanced logic and memory architectures.
Context
Leading semiconductor test equipment manufacturer Advantest (TSE: 6857) has officially launched its next-generation E3660 CD-SEM, a critical metrology system designed specifically for the 2nm node and beyond. This electron beam technology addresses the increasing complexity of EUV masks and curvilinear patterns, which are expected to see large-scale deployment by 2027 alongside High Numerical Aperture (High-NA) lithography. Developed in collaboration with imec, the system delivers a 20% improvement in critical dimension reproducibility compared to its predecessor, the E3650.
This development is pivotal as the industry shifts toward GAAFET and nanosheet transistors, where traditional optical inspection fails to detect atomic-scale defects. By targeting both merchant and captive mask shops, Advantest aims to secure a dominant position in the sub-2nm metrology market, which is part of a broader e-beam wafer inspection sector projected to reach $6.9 billion by 2035. This launch reinforces the company's role as a gatekeeper for Moore’s Law in the high-performance computing and AI supply chains.
Sources (7)
Advantest to Showcase Latest Test Solutions at SEMICON Japan 2025 in Tokyo | News & Events (2025)｜ADVANTEST CORPORATIONHMI eScan 1100 - Metrology & inspection systems | ASMLAdvantest Introduces Advanced Mask CD-SEM “E3660”Advantest introduces Advanced Mask CD-SEM “E3660” - Silicon Semiconductor NewsPrecision Tools & Metrology | Keeping Moore’s Law Alive at 2nm Electron Beam Wafer Defect Inspection System Market Outlook 2026-2032E-Beam Wafer Inspection System Market Size, Forecasts 2035
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