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Soitec promotes SmartSiC technology for silicon carbide wafer manufacturing
Sunday, January 18, 2026 at 12:25 PM
Soitec is promoting its SmartSiC technology for silicon carbide wafer manufacturing, which utilizes its proprietary SmartCut process to improve material efficiency and performance in power semiconductor production.
Context
French semiconductor materials leader Soitec is accelerating the commercialization of its proprietary SmartSiC technology to address the global demand for high-performance power electronics. By utilizing a "SmartCut" process to bond a thin layer of high-quality silicon carbide onto a lower-cost handle, Soitec can produce wafers that offer superior conductivity and energy efficiency compared to traditional bulk SiC. This innovation is critical for the electric vehicle market, where it can extend driving range and shorten charging times for next-generation automotive platforms.
The company recently inaugurated its Bernin 4 manufacturing facility, specifically designed to scale SmartSiC production to meet high-volume industry requirements. Soitec is currently transitioning from 150mm to 200mm wafer sizes, a move that significantly improves manufacturing yields and reduces the overall carbon footprint of production. With key partnerships already in place with major chipmakers like STMicroelectronics, the company aims to capture a significant portion of the SiC market by 2030, positioning itself as a vital link in the power semiconductor supply chain.
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