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Rohm releases silicon carbide 3-phase inverter reference design
Wednesday, February 18, 2026 at 06:40 AM
Rohm has released a reference design for a 3-phase inverter circuit utilizing silicon carbide (SiC) to assist in the implementation of new SiC modules.
Context
Rohm has released a new 3-phase inverter reference design utilizing its 4th Generation Silicon Carbide (SiC) MOSFETs, aiming to streamline development for electric vehicle (EV) and industrial power systems. This design platform enables engineers to evaluate high-efficiency power conversion up to 10kVA, significantly reducing the time-to-market for next-generation traction inverters. By providing a comprehensive circuit layout including gate drivers and sensing boards, Rohm simplifies the transition from traditional silicon to wide-bandgap semiconductors.
The move is strategically timed as Rohm targets a 30-fold increase in SiC module production capacity by 2025-2026 to meet surging global demand. These 4th Gen components offer 1.5 times the power density of previous molded modules and substantially lower conduction resistance, critical for extending EV range and enhancing thermal management. This release reinforces Rohm’s vertical integration strategy and its goal to capture a larger share of the global SiC market, which is projected to grow at a 24.6% CAGR through 2031.
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