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Renesas launches 650V GaN bidirectional switch for AI data center power systems
Monday, March 23, 2026 at 10:40 AM
Renesas Electronics has introduced a 650V GaN bidirectional power switch designed to improve power density and efficiency in AI data centers. The device targets server power supply units (PSUs) and industrial power systems by consolidating multiple components into a single GaN-based solution.
Context
On March 23, 2026, Renesas Electronics announced the launch of the industry’s first 650V bidirectional gallium nitride (GaN) switch, the TP65B110HRU. Built on the SuperGaN platform acquired from Transphorm in 2024, this device represents a significant shift in power conversion by replacing multiple conventional back-to-back FETs with a single component. This integration reduces the overall switch count, minimizes PCB area, and lowers system costs for high-demand infrastructure including AI data centers, solar microinverters, and electric vehicle onboard chargers.
The launch is a critical step in supporting the transition to 800V DC power architectures, which are becoming essential as AI and high-performance computing workloads scale toward 600kW per rack. By utilizing d-mode GaN technology, the switch achieves high efficiency with a 110 mΩ on-resistance and is compatible with standard silicon gate drivers, requiring no negative gate bias. This advancement allows data center operators to increase power density and efficiency while managing the massive energy demands of next-generation GPU clusters.
Sources (5)
Renesas Unveils First Bidirectional 650V-Class GaN Switch For Solar Power Inverters, AI Data Centers and More | RenesasPowering the AI Data Center: Renesas and the Age of GaN - EE Times PodcastRenesas Electronics Adopts Next-Generation Power ...650-V GaN FETs Enable High-Density Power Conversion ...Renesas Powers NVIDIA’s 800V AI Data Center Vision with Advanced GaN-Based Solutions - Power Electronics News
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