Samsung sets year-end yield target for HBM4 at 85%
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Samsung sets year-end yield target for HBM4 at 85%

Friday, March 13, 2026 at 03:11 AM

Samsung Electronics has updated its internal roadmap for high-bandwidth memory, setting an aggressive year-end production yield target of 85% for its 12-layer HBM4 products. This move signals an acceleration in advanced packaging and memory manufacturing capabilities to compete for AI hardware dominance.

Context

On March 13, 2026, reports indicate that Samsung Electronics has aggressively raised its year-end yield target for HBM4 12-hi memory to 85%. This ambitious goal follows the company’s announcement in February 2026 that it had achieved an industry-first by beginning mass production and commercial shipping of HBM4 using its 6th-generation 10nm-class (1c) DRAM process. By targeting an 85% yield, Samsung aims to establish a dominant supply position over competitors like SK Hynix and Micron in the rapidly expanding AI memory market. This yield milestone is critical as Samsung anticipates its HBM sales will more than triple in 2026. The company is leveraging its unique position as an integrated device manufacturer to utilize Design Technology Co-Optimization (DTCO) between its foundry and memory units. With sampling for HBM4E expected in the second half of 2026 and custom HBM solutions slated for 2027, high production efficiency is essential to meeting the surging demand from global GPU manufacturers and hyperscalers.

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