News
Navitas introduces fifth-generation silicon carbide trench-assisted planar technology
Thursday, February 12, 2026 at 09:50 PM
Navitas Semiconductor has announced its fifth-generation silicon carbide technology featuring a trench-assisted planar architecture. This advancement aims to improve performance and efficiency in high-power semiconductor applications.
Context
Navitas has launched its 5th-generation GeneSiC Trench-Assisted Planar (TAP) technology, a 1200V platform engineered for the high-power demands of AI data centers, grid infrastructure, and industrial electrification. This release marks a key milestone in the company’s "Navitas 2.0" pivot, shifting focus from volatile consumer electronics to high-margin, mission-critical power segments.
The platform achieves a 35% improvement in energy-efficiency figures (RDS,ON x QGD) over previous generations, slashing switching losses to enable cooler, more compact power stages. Technical benchmarks include an extrapolated gate-oxide reliability exceeding 1 million years and a new "AEC-Plus" standard that surpasses current industry durability requirements for high-altitude and high-uptime environments.
Timing is critical as Navitas prepares for its full-year earnings report on February 24, 2026. By targeting a projected $3 billion annual AI data center opportunity and leveraging its partnership with NVIDIA, the company aims to drive sequential growth and reach EBITDA breakeven by the end of 2026.
Related Companies
Navitas
NVTS