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SK hynix develops MSC technology to enable high-speed 5-bit PLC NAND manufacturing
Saturday, January 17, 2026 at 07:07 AM
SK hynix has developed Multi-level Selection Cell (MSC) technology to overcome technical barriers in Penta-Level Cell (PLC) NAND flash memory. This innovation allows for 5-bit-per-cell storage with performance speeds up to 20 times faster than previous attempts, addressing historical latency and reliability issues in high-density memory manufacturing.
Context
SK hynix has unveiled its breakthrough Multi-Site Cell (MSC) technology, effectively overcoming the "5-bit barrier" in memory manufacturing. By splitting a single 3D NAND cell into two independent sites, the company achieved read speeds up to 20x faster than traditional Penta-Level Cell (PLC) designs. This innovation delivers a 25% capacity increase over current QLC standards, offering a high-density solution that finally resolves the speed and reliability trade-offs that previously stalled PLC development.
This milestone is a key part of the 4D 2.0 roadmap, designed to meet the extreme storage requirements of AI data centers and big data analytics. By reducing the required voltage states per site, SK hynix ensures greater endurance and faster programming times than standard cells. Having successfully demonstrated working wafers at the IEDM conference, the company is now prioritizing cost-effective manufacturing as it aims to integrate this technology into future high-capacity AI-NAND storage solutions.
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