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Fujitsu achieves record 74.3% power conversion efficiency with new GaN amplifier technology for 6G and radar
Thursday, March 5, 2026 at 10:52 PM
Fujitsu has developed a high-efficiency Gallium Nitride (GaN) power amplifier technology achieving a record 74.3% power conversion efficiency at 8 GHz. The technology utilizes a high-quality insulated gate for GaN High Electron Mobility Transistors (HEMTs), delivering an output density of 9.8 watts per millimeter. This breakthrough targets 6G communication (FR3 band) and X-band radar applications for weather, defense, and satellite communications, with commercialization expected around 2030.
Context
Fujitsu has announced a breakthrough in semiconductor efficiency, achieving a world-record 74.3% power conversion efficiency for a Gallium Nitride (GaN) high electron mobility transistor (HEMT) amplifier. Operating at 8 GHz, the technology simultaneously delivers a high output power density of 9.8 watts per millimeter. This development overcomes the traditional trade-off between power output and energy efficiency, leveraging a new high-quality insulating gate technology to minimize energy loss in high-frequency applications.
This innovation is a critical milestone for the deployment of 6G networks and advanced radar systems. The 8 GHz frequency is part of the FR3 band (7–24 GHz), a key candidate for 2030-era wireless standards, and the X-band, which is essential for maritime, weather, and defense radar. By significantly reducing power consumption while extending transmission range, Fujitsu is positioning itself as a primary technology provider for the next generation of high-capacity, energy-efficient global communications infrastructure.
Sources (12)
NVIDIA and Global Telecom Leaders Commit to Build 6G on Open and Secure AI-Native Platforms | NVIDIA NewsroomQualcomm accelerates 6G with AI-native device-to-data-center network transformation | QualcommWorld’s highest output X-band power amplifier for long-range wireless communication and radar | Fujitsu GlobalFujitsu GaN Amp achieves record power density for 75-110GHz comms - NewsEricsson, Qualcomm advance 6G toward commercializationProgramme | DATE 2025Fujitsu Develops Gallium-Nitride HEMT Amplifier Featuring World's Highest Output in the C-Ku Band[PDF] PROGRAM BOOK - ims-ieee.org
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