Samsung reports significant yield improvements for 2nm GAA process nodes
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Samsung reports significant yield improvements for 2nm GAA process nodes

Tuesday, March 24, 2026 at 09:58 PM

Samsung has reportedly achieved a significant breakthrough in its 2nm Gate-All-Around (GAA) semiconductor manufacturing process. Yield rates have improved from an initial 50-60% range, with recent industry reports suggesting the figure has tripled relative to earlier development stages.

Context

Samsung Electronics has achieved a major technical milestone as yields for its 2nm Gate-All-Around (GAA) process reportedly climbed toward 60-70%, a significant leap from the 30% levels seen early in 2025. This improvement allowed the company to pull forward the mass production schedule for its Exynos 2600 mobile processor by two months to September 2025. These gains are critical for the DS Division as it looks to regain market share from TSMC, which began its own 2nm (N2) volume production in late 2025. The yield stabilization is expected to drive double-digit revenue growth for Samsung Foundry in 2026 and has already secured orders from high-profile clients like Tesla and Apple. While a brief delay was reported for the Tesla AI6 chip into 2027, the overall progress on SF2 (first-generation 2nm) and the upcoming SF2P (second-generation) node positions Samsung as a viable alternative for high-performance computing and AI applications. This manufacturing momentum, supported by a $37B CAPEX pivot, is intended to bridge the performance gap with Qualcomm’s Snapdragon series.

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